inchange semiconductor isc product specification isc silicon pnp darlingtion power transistor PMD1701K description high dc current gain collector-emitter breakdown voltage- v (br)ceo = -60v(min) complement to type pmd1601k applications designed for general purpose amplifier and low frequency switching applications absolute maximum ratings(t c =25 ) symbol parameter value unit v cbo collector-base voltage -60 v v ceo collector-emitter voltage -60 v v ebo emitter-base voltage -5.0 v i c collector current -continuous -20 a i cp collector current-peak -40 a i b b base current -0.5 a p c collector power dissipation@t c =25 180 w t j junction temperature 150 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r th j-c thermalresistance, junction to case 0.97 /w isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon pnp darlingtion power transistor PMD1701K electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min max unit v (br)ceo collector-emitter breakdown voltage i c = -100ma; i b = 0 -60 v v (br)cer collector-emitter breakdown voltage i c = -100ma; r be = 2.2k -60 v v ce (sat) collector-emitter saturation voltage i c = -10a; i b = -40ma -2.0 v v be (sat) base-emitter saturation voltage i c = -10a; i b = -40ma -2.8 v v be (on) base-emitter on voltage i c = -10a; v ce = -3v -2.8 v i cer collector cutoff current v ce = -60v; r be = 2.2k -7.0 ma i ebo emitter cut-off current v eb = -5v; i c = 0 -3.0 ma h fe dc current gain i c = -10a; v ce = -3v 750 20000 f t current-gain?bandwidth product i c = -7a; v ce = -3v, f= 1khz 4 mhz c ob output capacitance i e = 0; v cb = -10v; f test = 1.0mhz 400 pf isc website www.iscsemi.cn 2
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